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| geometry process details principal device types cmpd2003 cmpd2004 cmpd2005 1n3070 cmdd2004 cmsd2004 cmod2004 cmxd2004 cmld2004 gross die per 5 inch wafer 64,704 process cpd80v switching diode high voltage switching diode chip process epitaxial planar die size 16 x 16 mils die thickness 7.1 mils anode bonding pad area 6.5 x 6.5 mils top side metalization al - 30,000? back side metalization au-as - 13,000? backside cathode www.centralsemi.com r3 (22-march 2010)
process cpd80v typical electrical characteristics www.centralsemi.com r3 (22-march 2010) |
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